| PART |
Description |
Maker |
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| UPD4616112F9-B85LX-BC2 UPD4616112F9-B95LX-BC2 UPD4 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
|
| KM416S1020BT-G10T |
CMOS 16M-Bit SDRAM
|
ETC
|
| UPD4216400LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MX27C1610 27C1610-10 27C1610-12 |
16M-BIT [2M x 8/1M x 16] CMOS OTP ROM
|
MCNIX[Macronix International]
|
| MX29LV017A MX29LV017AXBI-70 MX29LV017AXBI-90 MX29L |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
|
http://
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| GM71VS64403AL |
(GM71VS64403AL / GM71V64403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
